IRENA: Indium Replacement by Single-Walled Carbon Nanotube Thin Films

The IRENA project aims to develop high performance materials, i.e. both metallic and semiconducting single-walled carbon nanotube (SWCNT) thin films to completely eliminate the use of the critical metals in electron devices: i) Indium in transparent conducting films (TCF, indium oxide doped by tin, ITO) and ii) Indium and Gallium as semiconductor In–Ga–Zn–O (a-IGZO) in thin film field effect transistors (TFTs).

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